DataCube Modes

Conductive AFM results are influenced by the applied sample voltage, depicting important performance transitions of a material or device. DCUBE-TUNA enables simultaneous acquisition of nanomechanical information and electrical conductivity at a multitude of sample voltages in a single measurement, building a dense data cube of sample information. This is the only mode providing a complete picture of the sample conductivity, with details such as conductivity type (Ohmic, non-Ohmic, Schottky, etc.), and barrier heights.

Scanning capacitance microscopy (SCM) provides a method for direct measurement of active carrier concentration with nanometer-scale accuracy. DCUBE-SCM enables simultaneous acquisition of nanomechanical and carrier information at a multitude of sample voltages in a single measurement. The technique provides a unique solution to observe dC/dV amplitude and dC/dV phase value changes and junction position shifts. Through the resulting data cubes, a researcher can observe additional information on oxide thickness, oxide charges, threshold voltages, contamination from mobile ions, and interface trap density.

Piezoresponse (Piezoforce) Microscopy (PFM) is a technique that maps out the inverse piezoelectric effect on a sample at nanometers scale. DCUBE-PFM enables simultaneous acquisition of nanomechanical information and PFM amplitude/phase spectra in data cubes, which reveal the switching voltage of each individual domain in a single data set. In addition, DCUBE-PFM overcomes artifacts, sample damage, and complexity of data analysis associated with conventional Contact Mode approaches.

DCUBE piezoresponse (piezoforce) microscopy in conjunction with contact resonance provides the benefits of DCUBE-PFM with the added benefit of providing a frequency ramp at every pixel, providing a full spectrum and the peak sensitivity at the contact resonance.

Scanning Spreading Resistance Microscopy (SSRM) is used to map the variation in majority carrier concentration in doped semiconductors. DCUBE-SSRM enables simultaneous acquisition of nanomechanical information and 3D carrier density mapping in a single measurement. The resulting data cubes provide complete characterization including nanoscale topography, mechanical information and log-resistance spectroscopy. In addition, I-V measurements reveal conductivity whether Ohmic, non-Ohmic, Schottky, or other.

Scanning Microwave Microscopy Imaging (sMIM) provides maps of the capacitive (C ) and resistive (R ) part of the impedance, as well as dC/dV, and dR/dV data – at a user defined sample voltage. With DCUBE-sMIM one can acquire the same properties at a variety of sample voltages, in a single scan - and get the ‘full picture’ at once. The spectra also reveal additional information, such as conduction type (Ohmic, non-Ohmic, Schottky, etc.), oxide thickness, oxide charges, contamination from mobile ions, and interface trap density.