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AFM Modes

Scanning Capacitance Microscopy (SCM)

High-resolution, two-dimensional dopant profiling

Mapping the carrier concentration across nonuniformly doped semiconductor samples has conventionally relied upon tools such as secondary ion mass spectrometry (SIMS), spreading resistance profiling (SRP), and one-dimensional capacitance-voltage (C-V). These instruments generate data in one dimension, requiring quantitative two-dimensional information to be inferred.

Scanning Capacitance Microscopy (SCM) provides a method for direct measurement of activated carrier concentration with nanometer scale accuracy in two dimensions. SCM is derived from Contact Mode and measures changes in capacitance between the tip and the sample surface using an extremely sensitive high-frequency resonant circuit.

In addition to SCM, Bruker offers several Nanoelectrical Characterization Modes for a wide range of electrical applications.

Request More Information Learn More: The Definitive AFM Modes Handbook
SCM image of a semiconductor surface, showing areas heavily doped by As+ ions. 70μm scan size.

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Get instant access to the full-length AFM modes handbook.

The Definitive AFM Modes Handbook contains everything you need to understand, select, and apply AFM techniques in materials research, including:

  • An easy-to-use framework for understanding the seven categories of AFM modes, their capabilities, and their core uses
  • Detailed descriptions of 50+ modes and variants (including 300+ data images)
  • Summary information about what each mode is, how it works, and when to use it
  • Our experts' top probe recommendations for each mode
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