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SEM EDS and TEM EDS for Semiconductor Analysis

Energy Dispersive X-Ray Spectroscopy (EDS/EDX) of Semiconductors

Energy Dispersive X-Ray Spectroscopy (EDS or EDX) is a powerful analytical technique for semiconductor analysis. The semiconductor industry requires precise and comprehensive characterization of materials. EDS meets these requirements by offering fast, reliable and non-destructive elemental analysis of semiconductor materials with exceptional sensitivity and spatial resolution.

Semiconductors play a pivotal role in electronic devices, ranging from microprocessors and memory chips to sensors and integrated circuits. Chemical mapping of semiconductor devices at high spatial resolution is required to optimize their performance, ensure quality control, and to advance research and development efforts.

EDS provides a non-destructive and efficient method to analyze the elemental distribution of semiconductor samples, enabling researchers and engineers to make informed decisions about material design, manufacturing processes, and overall device functionality.

What is EDS? Contact an Expert

SEM EDS for Semiconductor Analysis

EDS/EDX is an indispensable tool for semiconductor analysis, allowing researchers to precisely determine the elemental composition of materials at the microscale and beyond. 

SEM EDS provides crucial insights into semiconductor device structures, identifying and mapping elements to optimize device performance. This technique is particularly valuable for quality control, failure analysis, and research and development in the ever-advancing field of semiconductor technology.

Bruker's latest generation of EDS detectors, XFlash® 7, allows for unmatched analysis speeds without compromising spectral quality. Our novel detectors XFlash® 7100oval and XFlash® FlatQUAD maximize the solid angle for maximum collection efficiency and highest count rate at very low probe currents.

The ultra-high spatial resolution capable EDS detector XFlash® 7100oval has an oval shaped chip with windowless design and an active area of 100mm2 . The detector is compatible with entry-level to high-end microscopes, with or without magnetic immersion lenses, up to 30 kV for qualitative and quantitative analysis. This enables ultra-high spatial resolution chemical mapping of semiconductor features, giving analysts the opportunity to acquire TEM-like EDS mapping with SEM. 

Find out more about the application of SEM EDS in the semiconductor industry with our applications and webinars below. 

Ultra-high resolution EDS/EDX image of a FinFET structure taken using the XFlash® 7100oval detector. 

Applications of SEM EDS in the Semiconductor Industry

Elemental maps of FinFET structure taken using ultra-high spatial resolution EDS

Ultra-High Spatial Resolution EDS SEM of Semiconductor Devices

The acquisition of TEM-like EDS maps is also possible using a FE-SEM equipped with a high collection-effiency EDS detector. Here we present the unique capability of Bruker’s XFlash® 7100oval for the acquisition of ultra-high spatial resolution SEM EDS elemental maps.
Map Elements at Ultra-High Spatial Resolution
Elemental distribution of different layers of an IC chip with SEM EDS

SEM EDS Analysis of Interconnecting Layers of a Bulk 7 nm Process FinFET

Bruker's EDS Detectors acquire high-resolution elemental maps with a high count rate and a low probe current, meaning semiconductor layer analysis can be carried out faster and with high reliability. 
Analyze Semiconductor Layers
Surface and depth features resolved with SEM EDS using different kV

Compositional Analysis of an IC Chip's Surface and Substructure

SEM EDS analysis with the XFlash 7® EDS detector can be used for the compositional analysis of both a semiconductor's surface and substructure. 
Analyze Surface & Sub-Surface Features
FIB-TEM lamella of a CIGS solar cell

EDS Mapping of the FIB/TEM Lamella of Solar Cells

The chemical composition of low x-ray yield materials, like FIB/TEM lamellas and nanoparticles, can be reliably measured at nanoscale resolution in a SEM using Bruker's unique EDS FlatQUAD detector.
Analyze Elements in Low-Yield Materials

Webinars

csm_2020_Banner_nanostructural_characterization_semiconductors_2225c1c066
ON-DEMAND SESSION - 46 MINUTES

Nanostructural characterization of semiconductors with SEM

This webinar will discuss the quantitative characterization of nanostructured semiconducting materials using SEM with EDS and TKD techinques.
XFlash 6-100 oval
ON-DEMAND SESSION - 52 MINUTES

Introducing a Windowless High Collection Angle EDS Detector

We announce the release of a new large collection angle EDS detector with an oval shaped SDD area of 100 mm2, the XFlash® 6T-100 oval for TEM and STEM and the XFlash® 6-100 oval for SEM and T-SEM.
Distribution of Ni and Cr in Ni-based single crystal super alloy acquired at high magnifications in SEM
ON DEMAND SESSION - 37 MINUTES

Achieving Sub-10 nm EDS Spatial Resolution on Bulk Specimens in SEM

In this webinar, we demonstrate how sub-10 nm EDS-spatial resolution can be achieved using a low and high kV. Examples given include bulk semiconductor and aerospace materials with challenging element combinations.
Ultra-high resolution elemental map of a nanoscale feature on a semiconductor
ON DEMAND SESSION - 54 MINUTES

Ultra-High Spatial Resolution EDS Mapping of Semiconductors using FEG-SEM

In this webinar we demonstrate the strengths of SEM EDS for the chemical mapping of complex structures in bulk and of electron transparent specimens at a high spatial resolution. Sample analysis using a TESCAN Xe Plasma FIB-SEM and a TESCAN Ga FIB-SEM will be explored.

TEM EDS and STEM EDS for Semiconductor Analysis

EDS/EDX with a TEM is a vital tool for semiconductor analysis, offering high-resolution elemental analysis at the nanoscale. EDS TEM enables researchers to investigate the elemental composition of semiconductor materials with exceptional spatial precision, providing crucial information for the development and optimization of nanoscale devices.

The capability of EDS TEM to map elemental distributions in thin films and nanostructures makes it an essential technique for advancing semiconductor research and ensuring the quality of cutting-edge electronic components.

Find out more about the application of TEM EDS in the semiconductor industry by viewing the applications and webinars below. 

Applications of TEM EDS and STEM EDS in the Semiconductor Industry

RAM microchip elemental distribution map

High Resolution Mapping of a Semiconductor RAM Microchip Using STEM-EDS in SEM (T-SEM)

Element distribution mapping of semiconductor nanostructures with X-ray based methods is not always straight forward. The need of nanoscale spatial resolution and X-ray peak overlaps are common challenges when investigating semiconductor materials. Sometimes it can be beneficial to use the SEM instead of expensive TEM tools and time for characterization.
Map Elements in a Semiconductor
Mixed element map of nanowires

Chemical Characterization of Nanowires

Nanostructures, such as nanowires and nanorods and functionalized nanovehicles are of growing interest for various applications in nanotechnology, be that nano-electronics or drug delivery in the human body.
Characterize Nanostructures
Combined element maps of a layered system

Chemical Phase Analysis of a Layered Structure

It can be advantageous to check hyperspectral images for the existence of chemical phases without applying prior knowledge. Bruker’s ESPRIT AutoPhase automatically finds specimen regions of similar composition by analyzing a HyperMap based on Principle Component Analysis of the spectra. 
Automatically Determine Layered Structures
High angle annular darkfield image of an interconnect structure

Chemical Composition of Semiconductor Interconnects

Standard energy dispersive X-ray spectroscopy (EDS or EDX) using detector areas of 30mm2 on conventional scanning transmission electron microscopes (STEM) can deliver element mappings with nm resolution within a few minutes. The condition is, that the detector head is small enough (in slim-line design) to get as close to the specimen for (high solid angle) and as high above the specimen (for high take-off angle) as possible. The latter helps to avoid shadowing and absorption effects.
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Webinars

XFlash 6-100 oval
ON-DEMAND SESSION - 52 MINUTES

Introducing a Windowless High Collection Angle EDS Detector

We announce the release of a new large collection angle EDS detector with an oval shaped SDD area of 100 mm2, the XFlash® 6T-100 oval for TEM and STEM and the XFlash® 6-100 oval for SEM and T-SEM.
csm_banner_2020_wbnr_semiconductor_lamellas_new_a4fb19c773
ON-DEMAND SESSION - 60 MINUTES

EDS of semiconductor lamellae in SEM and STEM

The continuous miniaturization of semiconductor structures requires their understanding on the nanoscale to ensure best design and failure analysis.
Element distribution in FIB lamella by SEM EDS
ON-DEMAND SESSION - 57 MINUTES

Optimizing Semiconductor-based LED Devices Using EDS of Electron Transparent Specimens in STEM/SEM

The understanding of semiconductor structures on the nanoscale mostly needs high-end analytical scanning transmission electron microscopy including the respective method combination and complex specimen preparation. Here UV-LEDs have been recently tested for skin-tolerant inactivation of SARS-CoV-2 and multi-resistant bacteria.

QUANTAX Systems for EDS Analysis

As shown in these application examples, Bruker's QUANTAX EDS for SEM and QUANTAX EDS for TEM systems are well suited for use in the semiconductor industry. 

In addition to our industry-leading EDS technology, such as our XFlash® 7 detectors, Bruker provides application support and training. 

Discover QUANTAX EDS for SEM Discover QUANTAX EDS for TEM
Contact an Expert EDS Training
XFlash® 7 detectors for SEM EDS and TEM EDS

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