Atomic Force Microscopes

ScanAsyst Plus

Intelligent, self-optimizing imaging software for all AFM topography modes

Achieving Expert Quality Images for All Users, Now for All Topography Modes

The original ScanAsyst®, introduced in 2009, was the world’s first automatic image optimization technology for AFM. It enabled even beginning AFM users to quickly and reliably produce expert-level results. Now, Bruker has introduced ScanAsyst Plus with enhanced intelligent algorithms and even greater ease of use. ScanAsyst Plus comes standard with select NanoScope® 6 systems and brings greater capability to Bruker AFMs by expanding self-optimizing imaging to all topography modes, including PeakForce Tapping®, TappingMode™, and contact mode.

ScanAsyst Plus’ patent-pending smart functionality continuously monitors image quality and automatically optimizes scan parameters. This frees users from the often-tedious task of determining which scan parameters to adjust for a specific operating mode or for individual samples. Whether your AFM studies are focused on academic research or industrial metrology applications, ScanAsyst Plus delivers expert quality high-resolution imaging, not only independent of operator experience, but also independent of imaging mode.

ScanAsyst Plus provides:

  • Simplified, consistent high-resolution imaging of surface structure and morphology for a wide range of samples (e.g., polymers, 2D materials, etc.)
  • Single-button, repeatable measurements for wafer applications, such as surface roughness and defect characterization
  • Stable imaging over extended periods in all imaging modes due to adaptive drift resistance
  • Enhanced ease of use features to customize the level of control for parameter optimization that best suits your needs
  • Automated acquisition of complete image datasets for combinatorial studies
Topography image of a patterned array of nanopillars obtained with ScanAsyst Plus in TappingMode, using a TESPA probe. Several individual nanopillars within the array are observed to have structural defects. Image size 5 μm.

LEFT: Topography image of a patterned array of nanopillars obtained with ScanAsyst Plus in TappingMode, using a TESPA probe. Several individual nanopillars within the array are observed to have structural defects. Image size 5 μm.

RIGHT: Corresponding amplitude error image. The symmetrical shape of the nanopillars shows how accurately ScanAsyst Plus tracks the abrupt topography changes between the substrate and each nanopillar. Image size 5 μm.

Corresponding amplitude error image. The symmetrical shape of the nanopillars shows how accurately ScanAsyst Plus tracks the abrupt topography changes between the substrate and each nanopillar. Image size 5 μm.

LEFT: Topography image of a patterned array of nanopillars obtained with ScanAsyst Plus in TappingMode, using a TESPA probe. Several individual nanopillars within the array are observed to have structural defects. Image size 5 μm.

RIGHT: Corresponding amplitude error image. The symmetrical shape of the nanopillars shows how accurately ScanAsyst Plus tracks the abrupt topography changes between the substrate and each nanopillar. Image size 5 μm.

Proven results on a wide range of samples:

Terrace-step nanostructure of sapphire imaged with ScanAsyst Plus in Contact Mode, using a ScanAsyst-Air-HPI probe. Image size 5 µm.

Terrace-step nanostructure of sapphire imaged with ScanAsyst Plus in Contact Mode, using a ScanAsyst-Air-HPI probe. Image size 5 µm.

 

Morphology of a hydrophobic, polypropylene membrane (Celgard) made up of alternating lamellae and fibers. Image was acquired with ScanAsyst Plus in TappingMode, using an RTESPA-300 probe. Image size 3 µm.

Morphology of a hydrophobic, polypropylene membrane (Celgard) made up of alternating lamellae and fibers. Image was acquired with ScanAsyst Plus in TappingMode, using an RTESPA-300 probe. Image size 3 µm.
Atomic step structure of gallium nitride (GaN) on silicon carbide (SiC) imaged with ScanAsyst Plus in TappingMode, using an OTESPA probe. Image size 5 µm.

Atomic step structure of gallium nitride (GaN) on silicon carbide (SiC) imaged with ScanAsyst Plus in TappingMode, using an OTESPA probe. Image size 5 µm.

 

Nanoscale grain structure of indium tin oxide (ITO) film imaged with ScanAsyst Plus in PeakForce Tapping Mode, using a ScanAsyst-Air-HPI probe. Image size 2 µm.

Nanoscale grain structure of indium tin oxide (ITO) film imaged with ScanAsyst Plus in PeakForce Tapping Mode, using a ScanAsyst-Air-HPI probe. Image size 2 µm.

 

Lamellar aggregates of poly(diethyl siloxane) (PDES) on silicon imaged with ScanAsyst Plus in TappingMode, using an RTESPA probe. Image size 90 µm.

Lamellar aggregates of poly(diethyl siloxane) (PDES) on silicon imaged with ScanAsyst Plus in TappingMode, using an RTESPA probe. Image size 90 µm.

 

Surface structure of a static random-access memory (SRAM) sample imaged with ScanAsyst Plus in TappingMode, using a TESPA probe. Image size 20 µm.

Surface structure of a static random-access memory (SRAM) sample imaged with ScanAsyst Plus in TappingMode, using a TESPA probe. Image size 20 µm.