Si和W晶圆腐蚀残留物快速元素面分析

当做元素面分析的时间需要尽可能缩短的时候，人们对输入计数率(ICR)的渴望就变得更大了。在使用正常的输入计数率时(在此是63kcps)，如果测试时间很短(每帧7秒)，总的计数率就会太低以至于无法提供定量元素面分布信息，甚至于不经过处理都无法得到可用的面分布信息(图2上)。

Mapping is especially challenging when peak deconvolution is required, like in this example with Si-K and W-M peak line series overlaps (i.e., Si-Ka at 1.740 keV and W-Ma lines at 1.775 keV). An online deconvolution function is applied to the EDS mapping to retrieve the deconvolved net peak intensities (Figure 1).

Higher electron beam currents provide higher incoming count rates (ICR in this example 700 kcps) allowing fast EDS mapping with sufficient count statistics and preserved spectral quality. Using such measurement conditions, the new XFlash^® 7 detectors provide a detailed element distribution image down to physically optimal resolution without the need for map filtering (Figures 2 bottom, 3 bottom).

Fig. 1: Peak deconvolution of the strongly overlapping Si-Ka (1.740 keV) and W-Ma (1.775 keV) lines

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Fig. 2: Composite raw EDS maps distinguishing Si and W residues on etched Au. The measurements were done at 15kV and 1 frame (7 seconds measurement time). Top image: 63kcps ICR (18% dead time). Bottom image: 700kcps ICR (38% dead time). No image filter was used. The element distribution maps are based on deconvolved net intensities of the Si-K and W-M lines.

Fig. 3: Raw composite EDS maps acquired at 15kV with 20 frames (140 seconds measurement time). Top image: 63kcps ICR (18% dead time). Bottom image: 700kcps ICR (38% dead time). No image filter was used. The maps show deconvolved net intensities of the Si-K and W-M lines.